Technology
ASML, TSMC and Samsung commit to 12-inch High-NA EUV masks as Intel runs the first volume line
ASML has secured joint commitments from TSMC, Samsung Electronics and Intel to move High-NA extreme ultraviolet lithography to 12-inch photomasks, with chief technology officer Marco Pieters putting the throughput gain at roughly 40% per scanner. Samsung will deploy High-NA in DRAM production from 2028, TSMC will follow in advanced-node logic from 2030 with a 12-inch pilot line by 2031, and Intel — already running its first EXE:5000 systems in high-volume production — keeps its lead. Each High-NA EUV system costs about $400 million; Bank of America reiterated a €2,452 target on ASML.